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Results 1 to 25 of 1523

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MODE GAIN AND JUNCTION CURRENT IN GAAS UNDER LASING CONDITIONS.HAKKI BW.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 1; PP. 288-294; BIBL. 18 REF.Article

HIGH-FORWARD-VOLTAGE PHENOMENON IN INJECTION GAAS/GE HETEROJUNCTIONS.JAIN FC; MELEHY MA.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 1; PP. 36-39; BIBL. 8 REF.Article

EMISSION FROM AN OPTICALLY PUMPED GAAS UNDER DRIFTING FIELD.MINAMI T; YAMANISHI M; KAWAMURA T et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 8; PP. 1327-1328; BIBL. 7 REF.Article

TEMPERATURE DEPENDENCE OF THE BAND GAP AND COMPARISON WITH THE THRESHOLD FREQUENCY OF PURE GAAS LASERS.CAMASSEL J; AUVERGNE D; MATHIEU H et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 6; PP. 2683-2689; BIBL. 36 REF.Article

INCREASED RADIATION HARDNESS OF GAAS LASER DIODES AT HIGH CURRENT DENSITIES.BARNES CE.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 8; PP. 3485-3489; BIBL. 11 REF.Article

LIQUID PHASE EPITAXIAL (LPE) GROWN JUNCTION IN1-XGAXP (X EQUIV. A 0.63) LASER OF WAVE LENGTH LAMBDA EQUIV. A 5900 A (2.10 EV, 77OK).HITCHENS WR; HOLONYAK N JR; LEE MH et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 6; PP. 352-354; BIBL. 12 REF.Article

GAAS DOUBLE HETEROSTRUCTURE LASING BEHAVIOR ALONG THE JUNCTION PLANE.HAKKI BW.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 1; PP. 292-302; BIBL. 26 REF.Article

SEMICONDUCTORS: EPITAXIAL GROWTH OF LASER DIODES.ROBINSON AL.1975; SCIENCE; U.S.A.; DA. 1975; VOL. 188; NO 4189; PP. 720-722; BIBL. 2 REF.Article

PROPRIETES D'OPTIQUE NON LINEAIRE DU SELENIURE DE GALLIUMSOKOLOV VI; SOLOMONOV YU F; SUBASHIEV VK et al.1975; FIZ. TVERD. TELA; S.S.S.R.; DA. 1975; VOL. 17; NO 7; PP. 1914-1920; BIBL. 26 REF.Article

OBSERVATION OF GHOST PEAKS IN GAAS SINGLE-HETEROSTRUCTURE LIGHT-EMITTING DIODES.LASTRAS MARTINEZ A; KONAGAI M; TAKAHASHI K et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 4; PP. 1549-1551; BIBL. 6 REF.Article

DISLOCATION PINNING IN GAAS BY THE DELIBERATE INTRODUCTION OF IMPURITIES. = ANCRAGE DES DISLOCATIONS DANS GAAS PAR INTRODUCTION DELIBEREE D'IMPURETESKIRBY PA.1975; I.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 7 PART. 2; PP. 562-568; BIBL. 17 REF.Article

FREQUENCY CONTROLLED CW TUNABLE GAAS LASER.PICQUE JL; ROIZEN S.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 6; PP. 340-342; BIBL. 12 REF.Article

GAXIN1-X P-GAY AL1-Y AS HETEROJUNCTION CLOSE-CONFINEMENT INJECTION LASER.SCHUL G; MISCHEL P.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 7; PP. 394-395; BIBL. 7 REF.Article

HETEROJUNCTION LASER OPERATION OF N-FREE AND N-DOPED GAAS1-YPY (Y=0.42-0.43 LAMBDA EQUIV. A 6200 A, 77OK) NEAR THE DIRECT INDIRECT TRANSITION (Y EQUIV. A YC EQUIV. A 0.46).COLEMAN JJ; HOLONYAK N JR; LUDOWISE MJ et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 8; PP. 3556-3561; BIBL. 25 REF.Article

MONOLITHIC GA1-XINXAS DIODE LASERS.DOERBECK FH; LAWLEY KL; BLUM FA et al.1975; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 7 PART. 2; PP. 464-467; BIBL. 5 REF.Article

PSEUDORANDOM 250 MB/S MODULATION OF GAAS L.E.D.S.DAWSON RW.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 7; PP. 144-145; BIBL. 6 REF.Article

STRIPED GAAS LASERS: MODE SIZE AND EFFICIENCY.HAKKI BW.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 6; PP. 2723-2730; BIBL. 22 REF.Article

ETUDE DES TRANSISTORS D'AVALANCHE A BASE DE GAASAKHMEDOV FA; KOROL'KOV VI; LERSHINA LP et al.1975; ZH. TEKH. FIZ.; S.S.S.R.; DA. 1975; VOL. 45; NO 1; PP. 138-143; BIBL. 3 REF.Article

APPLICATION OF THE LIGHT-SHIFT EFFECT TO LASER FREQUENCY STABILIZATION WITH REFERENCE TO A MICROWAVE FREQUENCY STANDARD.ARDITI M; PICQUE JL.1975; OPT. COMMUNIC.; NETHERL.; DA. 1975; VOL. 15; NO 2; PP. 317-322; BIBL. 14 REF.Article

EFFECT OF DOPING ON DEGRADATION OF ALXGA1-XAS INJECTION LASERS.MCMULLIN PG; BLUM J; SHIH KK et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 2; PP. 595-597; BIBL. 17 REF.Article

GAAS LASER ARRAYS WITH FIBRE-OPTIC COUPLING.EALES BA; SELWAY PR.1974; IN: ELECTRO-OPT. INT. '74 CONF. PROC. TECH. PROGR.; BRIGHTON, ENGL.; 1974; SURBITON, SURREY; KIVER COMMUN.; DA. 1974; PP. 242-247; BIBL. 2 REF.Conference Paper

ROOM-TEMPERATURE LASER OPERATION OF INXGA1-XAS P-N JUNCTIONS.NUESE CJ; ENSTROM RE; ETTENBERG M et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 2; PP. 83-85; BIBL. 10 REF.Article

DIODOS ELECTROLUMINESCENTES DE ASGA EPITAXIAL. = DIODES ELECTROLUMINESCENTES AU GAAS EPITAXIALPIQUERAS J; MENDEZ E; FERNANDEZ A et al.1974; R. SOC. ESP. FIS. QUIM., AN. FIS.; ESP.; DA. 1974; VOL. 70; NO 1; PP. 106-109; ABS. ANGL.; BIBL. 6 REF.Article

CONTACTS PLANS NON REDRESSEURS AVEC GASBKRUKOVSKAYA LP; GOLUBEV LV; SHMARTSEV YU V et al.1974; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1974; NO 1; PP. 233-234; BIBL. 2 REF.Article

LASERS A GAAS A REACTION REPARTIE ET TECHNOLOGIE CORRESPONDANTENAKAMURA M; AIKI K; UMEDA JI et al.1974; OYO BUTURI; JAP.; DA. 1974; VOL. 43; NO 9; PP. 963-967; BIBL. 13 REF.Article

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